半导体、微电子专业英语单词(优选3篇)

半导体、微电子专业英语单词 篇一

In the field of semiconductors and microelectronics, there are numerous specialized English words that are commonly used. These words are essential for professionals in the industry to communicate effectively and understand the technical aspects of their work. In this article, we will explore some of these key words and their meanings.

1. Semiconductor: A material that has electrical conductivity between that of a conductor and an insulator. Semiconductors are used extensively in electronic devices and integrated circuits.

2. Transistor: A semiconductor device that can amplify or switch electronic signals and electrical power. Transistors are fundamental building blocks of modern electronic devices.

3. Diode: A semiconductor device that allows current to flow in one direction and blocks it in the opposite direction. Diodes are used in rectifiers, voltage regulators, and signal demodulators.

4. Integrated Circuit (IC): A miniaturized electronic circuit consisting of semiconductor devices and passive components on a single chip of semiconductor material. ICs are widely used in electronic devices and computers.

5. Wafer: A thin slice of semiconductor material, commonly made of silicon, used as a base for the fabrication of integrated circuits. Wafers undergo various processes such as doping, etching, and deposition to create electronic components.

6. Photolithography: A process used to transfer a pattern onto a wafer using light. It involves applying a photosensitive material called photoresist and exposing it to light through a patterned mask.

7. Etching: A process used to selectively remove unwanted material from the surface of a wafer. Etching can be done using chemical or physical methods and is essential for creating patterns and structures in integrated circuits.

8. Doping: The process of intentionally introducing impurities into a semiconductor material to alter its electrical properties. Doping is used to create regions of different conductivity types, such as p-type and n-type.

9. CMOS: Complementary Metal-Oxide-Semiconductor. A technology used in the fabrication of integrated circuits that uses both p-type and n-type transistors. CMOS is widely used in digital integrated circuits due to its low power consumption.

10. VLSI: Very Large-Scale Integration. A technology that allows the integration of a large number of transistors and components onto a single chip. VLSI has revolutionized the field of microelectronics, enabling the creation of complex and powerful electronic devices.

These are just a few examples of the many specialized English words used in the field of semiconductors and microelectronics. Familiarizing oneself with these terms is crucial for professionals in the industry to effectively communicate and stay updated with the latest developments in the field.

半导体、微电子专业英语单词 篇二

In the previous article, we explored some key English words used in the field of semiconductors and microelectronics. In this article, we will delve deeper into the topic and discuss additional important words and concepts.

1. Silicon: The most commonly used material for the fabrication of semiconductors and integrated circuits. Silicon has excellent electrical properties and is abundant in nature, making it an ideal choice for the industry.

2. MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor. A type of transistor that uses a metal gate electrode separated from the semiconductor by a thin insulating layer. MOSFETs are widely used in integrated circuits due to their small size and low power consumption.

3. Latch-up: A condition in which a parasitic thyristor structure is inadvertently activated, causing a high current to flow through the device. Latch-up can lead to device failure and is a concern in the design and operation of integrated circuits.

4. Yield: The percentage of good chips produced during the manufacturing process of integrated circuits. Yield is an important metric as it directly impacts the cost and profitability of the production process.

5. Flip-Chip: A packaging technique where the active side of a semiconductor chip is directly connected to the packaging substrate using solder bumps. Flip-chip technology allows for higher interconnect density and improved electrical performance.

6. Dielectric: An insulating material used to separate conductive elements in integrated circuits. Dielectrics are essential for preventing unwanted electrical interactions and ensuring proper device operation.

7. Interconnect: The wiring or metal traces that connect different components and elements within an integrated circuit. Interconnects play a crucial role in determining the performance and speed of the circuit.

8. Wafer Fabrication: The process of manufacturing integrated circuits on a wafer. This involves several steps such as oxidation, deposition, lithography, etching, and metallization.

9. MEMS: Microelectromechanical Systems. The integration of mechanical elements, sensors, actuators, and electronics on a single chip. MEMS devices are used in various applications such as automotive, healthcare, and consumer electronics.

10. Electromigration: The movement of metal atoms in a conductor due to the flow of high current. Electromigration can lead to the degradation and failure of interconnects in integrated circuits.

Understanding and using these specialized English words is essential for professionals in the field of semiconductors and microelectronics. It enables effective communication, collaboration, and a deeper understanding of the technical aspects of the industry.

半导体、微电子专业英语单词 篇三

半导体、微电子专业英语单词汇总

　　79. flatband capacitanse：平带电容

　　80. flatband voltage：平带电压

　　81. flow coefficicent：流动系数

　　82. flow velocity：流速计

　　83. flow volume：流量计

　　84. flux：单位时间内流过给定面积的颗粒数

　　85. forbidden energy gap：禁带

　　86. four-point probe：四点探针台

　　87. functional area：功能区

　　88. gate oxide：栅氧

　　89. glass transition temperature：玻璃态转换温度

　　90. gowning：净化服

　　91. gray area：灰区

　　92. grazing incidence interferometer：切线入射干涉仪

　　93. hard bake：后烘

　　94. heteroepitaxy：单晶长在不同材料的衬底上的外延方法

　　95. high-current implanter：束电流大于3ma的注入方式，用于批量生产

　　96. hign-efficiency particulate air(HEPA) filter：高效率空气颗粒过滤器，去掉99.97%的大于0.3um的颗粒

　　97. host：主机

　　98. hot carriers：热载流子

　　99. hydrophilic：亲水性

　　100. hydrophobic：疏水性

　　101. impurity：杂质

　　102. inductive coupled plasma(ICP)：感应等离子体

　　103. inert gas：惰性气体

　　104. initial oxide：一氧

　　105. insulator：绝缘

　　106. isolated line：隔离线

　　107. implant : 注入

　　108. impurity n : 掺杂

　　109. junction : 结

　　110. junction spiking n :铝穿刺

　　111. kerf :划片槽

　　112. landing pad n AD

　　113. lithography n 制版

　　114. maintainability, equipment : 设备产能

　　115. maintenance n :保养

　　116. majority carrier n :多数载流子

　　117. masks, device series of n : 一成套光刻版

　　118. material n :原料

　　119. matrix n 1 :矩阵

　　120. mean n : 平均值

　　121. measured leak rate n :测得漏率

　　122. median n :中间值

　　123. memory n : 记忆体

　　124. metal n :金属

　　125. nanometer (nm) n ：纳米

　　126. nanosecond (ns) n ：纳秒

　　127. nitride etch n ：氮化物刻蚀

　　128. nitrogen (N2 ) n： 氮气，一种双原子气体

　　129. n-type adj ：n型

　　130. ohms per square n：欧姆每平方: 方块电阻

　　131. orientation n： 晶向，一组晶列所指的方向

　　132. ov

　　133. oxidation n ：氧化，高温下氧气或水蒸气与硅进行的化学反应

　　134. phosphorus (P) n ：磷 ，一种有毒的非金属元素

　　135. photomask n ：光刻版，用于光刻的版

　　136. photomask, negative n：反刻

　　137. images：去掉图形区域的版

　　138. photomask, positive n：正刻

　　139. pilot n ：先行批，用以验证该工艺是否符合规格的片子

　　140. plasma n ：等离子体，用于去胶、刻蚀或淀积的电离气体

　　141. plasma-enhanced chemical vapor deposition (PECVD) n： 等离子体化学气相淀积，低温条件下的等离子淀积工艺

　　142. plasma-enhanced TEOS oxide deposition n：TEOS淀积，淀积TEOS的一种工艺

　　143. pn junction n：pn结

　　144. pocked bead n：麻点，在20X下观察到的吸附在低压表面的水珠

　　145. polarization n：偏振，描述电磁波下电场矢量方向的术语

　　146. polycide n：多晶硅 /金属硅化物， 解决高阻的复合栅结构

　　147. polycrystalline silicon (poly) n：多晶硅，高浓度掺杂(> 5E19)的硅，能导电。

　　148. polymorphism n：多态现象，多晶形成一种化合物以至少两种不同的形态结晶的现象

　　149. prober n :探针。在集成电路的电流测试中使用的一种设备，用以连接圆片和检测设备。

　　150. process control n :过程控制。半导体制造过程中，对设备或产品规范的控制能力。

　　151. proximity X-ray n :近X射线：一种光刻技术，用X射线照射置于光刻胶上方的掩 膜版，从而使对应的光刻胶暴光。

　　152. pure water n : 纯水。半导体生产中所用之水。

　　153. quantum device n :量子设备。一种电子设备结构，其特性源于电子的波动性。

　　154. quartz carrier n :石英舟。

　　155. random access memory (RAM) n :随机存储器。

　　156. random logic device n :随机逻辑器件。

　　157. rapid thermal processing (RTP) n :快速热处理(RTP)。

　　158. reactive ion etch (RIE) n : 反应离子刻蚀(RIE)。

　　159. reactor n :反应腔。反应进行的密封隔离腔。

　　160. recipe n :菜单。生产过程中对圆片所做的每一步处理规范。

　　161. resist n :光刻胶。

　　162. scanning electron microscope (SEM) n :电子显微镜(SEM)。

　　163. scheduled downtime n : (设备)预定停工时间。

　　164. Schottky barrier diodes n :肖特基二极管。

　　165. scribe line n :划片槽。

　　166. sacrificial etchback n :牺牲腐蚀。

　　167. semiconductor n :半导体。电导性介于导体和绝缘体之间的元素。

　　168. sheet resistance (Rs) (or per square) n :薄层电阻。一般用以衡量半导体表面杂质掺杂水平。

　　169. side load: 边缘载荷，被弯曲后产生的应力。

　　170. silicon on sapphire(SOS)epitaxial wafer:外延是蓝宝石衬底硅的原片

　　171. small scale integration(SSI):小规模综合，在单一模块上由2到10个图案的布局。

　　172. source code:原代码，机器代码编译者使用的，输入到程序设计语言里或编码器的代码。

　　173. spectral line: 光谱线，光谱镊制机或分光计在焦平面上捕捉到的狭长状的图形。

　　174. spin webbing: 旋转带，在旋转过程中在下表面形成的细丝状的剩余物。

　　175. sputter etch: 溅射刻蚀，从离子轰击产生的表面除去薄膜。

　　176. stacking fault:堆垛层错，原子普通堆积规律的背离产生的2次空间错误。

　　177. steam bath:蒸汽浴，一个大气压下，流动蒸汽或其他温度热源的暴光。

　　178. step response time:瞬态特性时间，大多数流量控制器实验中，普通变化时段到气流刚 到达特定地带的那个时刻之间的时间。

　　179. stepper: 步进光刻机(按BLOCK来曝光)

　　180. stress test: 应力测试，包括特定的电压、温度、湿度条件。

　　181. surface profile:表面轮廓，指与原片表面垂直的平面的轮廓(没有特指的情况下)。

　　182. symptom:征兆，人员感觉到在一定条件下产生变化的弊病的主观认识。

　　183. tack weld:间断焊，通常在角落上寻找预先有的地点进行的点焊(用于连接盖子)。

　　184. Taylor tray:泰勒盘，褐拈土组成的高膨胀物质。

　　185. temperature cycling:温度周期变化，测量出的重复出现相类似的高低温循环。

　　186. testability:易测性，对于一个已给电路来说，哪些测试是适用它的。

　　187. thermal deposition:热沉积，在超过950度的高温下，硅片引入化学掺杂物的过程。

　　188. thin film:超薄薄膜，堆积在原片表面的用于传导或绝缘的一层特殊薄膜。

　　189. titanium(Ti): 钛。

　　190. toluene(C6H5CH3): 甲苯。有毒、无色易燃的液体，它不溶于水但溶于酒精和大气。

　　191. 1,1,1-trichloroethane(TCA)(CL3CCH3): 有毒、不易燃、有刺激性气味的液态溶剂。这种混合物不溶于水但溶于酒精和大气。

　　192. tungsten(W): 钨。

　　193. tungsten hexafluoride(WF6): 氟化钨。无色无味的气体或者是淡黄色液体。在CVD中WF6用于淀积硅化物，也可用于钨传导的薄膜。

　　194. tinning: 金属性表面覆盖焊点的薄层。

　　195. total fixed charge density(Nth): 下列是硅表面不可动电荷密度的总和：氧化层固定电荷密度(Nf)、氧化层俘获的电荷的密度(Not)、界面负获得电荷密度(Nit)。

　　196. watt(W): 瓦。能量单位。

　　197. wafer flat: 从晶片的一面直接切下去，用于表明自由载流子的导电类型和晶体表面的晶向，也可用于在处理和雕合过程中的排列晶片。

　　198. wafer process chamber(WPC): 对晶片进行工艺的腔体。

　　199. well: 阱。

　　200. wet chemical etch: 湿法化学腐蚀。

　　201. trench: 深腐蚀区域，用于从另一区域隔离出一个区域或者在硅晶片上形成存储电容器。

　　202. via: 通孔。使隔着电介质的上下两层金属实现电连接。

　　203. window: 在隔离晶片中，允许上下两层实现电连接的绝缘的通道。

　　204. torr : 托。压力的单位。

　　205. vapor pressure: 当固体或液体处于平衡态时自己拥有的蒸汽所施加的压力。蒸汽压力是与物质和温度有关的函数。

　　206. vacuum: 真空。

　　207. transition metals: 过渡金属

　　ACA Anisotropic Conductive Adhesive 各向异性导电胶

　　ACAF Anisotropic Conductive Adhesive Film各项异性导电胶膜

　　Al Aluminium 铝

　　ALIVH All Inner Via Hole 完全内部通孔

　　AOI Automatic Optial Inspection 自动光学检查

　　ASIC Application Specific Integrated Circuit 专用集成电路

　　ATE Automatic Test Equipment 自动监测设备

　　AU Gold 金

　　BCB Benzocyclohutene,Benzo Cyclo Butene 苯丙环丁烯

　　BEO Beryllium Oxide 氧化铍

　　BIST Built-In Self-Test(Function) 内建自测试(功能)

　　BIT Bipolar Transistor 双极晶体管

　　BTAB Bumped Tape Automated Bonding 凸点载带自动焊

　　BGA Ball Grid Array 焊球阵列

　　BQFP Quad Flat Package With Bumper 带缓冲垫的四边引脚扁平封装

　　C4 Controlled Collapsed Chip Connection 可控塌陷芯片连接

　　CAD Computer Aided Design 计算机辅助设计